GT50J121 2002-03-18 1 toshiba insulated gate bipolar transistor silicon n channel igbt GT50J121 high power switching applications fast switching applications the 4 th generation enhancement-mode fast switching (fs): operating frequency up to 50 khz (reference) high speed: t f = 0.05 s (typ.) low switching loss : e on = 1.30 mj (typ.) : e off = 1.34 mj (typ.) low saturation voltage: v ce (sat) = 2.0 v (typ.) maximum ratings (ta 25c) characteristics symbol rating unit collector-emitter voltage v ces 600 v gate-emitter voltage v ges 20 v dc i c 50 collector current 1 ms i cp 100 a collector power dissipation (tc 25c) p c 240 w junction temperature t j 150 c storage temperature range t stg 55 to 150 c thermal characteristics characteristics symbol max unit thermal resistance r th (j-c) 0.521 c/w unit: mm jedec D jeita D toshiba 2-21f2c weight: 9.75 g
GT50J121 2002-03-18 2 electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge 20 v, v ce 0 500 na collector cut-off current i ces v ce 600 v, v ge 0 1.0 ma gate-emitter cut-off voltage v ge (off) i c 5 ma, v ce 5 v 3.5 6.5 v collector-emitter saturation voltage v ce (sat) i c 50 a, v ge 15 v 2.0 2.45 v input capacitance c ies v ce 10 v, v ge 0, f 1 mhz 7900 pf turn-on delay time t d (on) 0.09 rise time t r 0.07 turn-on time t on 0.24 turn-off delay time t d (off) 0.30 fall time t f 0.05 switching time turn-off time t off 0.43 s turn-on switching loss e on 1.30 switching loss turn-off switching loss e off inductive load v cc 300 v, i c 50 a v gg 15 v, r g 13 (note 1) (note 2) 1.34 mj note 1: switching time measurement circuit and input/output waveforms note 2: switching loss measurement waveforms 10% 90% v ge v ce i c e off e on 0 0 5% gt50j325 r g i c v ce l v cc v ge 10% 90% v ge v ce i c t d (off) t of f t d ( on ) t r t on 0 0 t f 10% 10% 10% 90% 10% 90%
GT50J121 2002-03-18 3 collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) i c ? v ge collector current i c (a) case temperature tc (c) v ce (sat) ? tc collector-emitter saturation voltage v ce (sat) (v) 0 4 8 12 16 20 common emitter tc 40c 30 50 i c 10 a 100 0 4 8 12 16 20 0 4 8 12 16 20 common emitter tc 25c 0 4 8 12 16 20 30 50 i c 10 a 100 0 4 8 12 16 20 common emitter tc 125c 0 4 8 12 16 20 30 50 i c 10 a 100 0 4 8 12 16 20 40 25 tc 125c 0 20 40 60 80 100 common emitter v ce 5 v 60 20 20 60 100 140 50 30 i c 10 a 70 0 1 2 3 4 5 common emitter v ge 15 v 100 0 1 2 3 4 5 10 8 v ge 7 v 15 0 20 40 60 80 100 common emitter tc 25c 20
GT50J121 2002-03-18 4 collector current i c (a) switching time t on , t r , t d (on) ? i c switching time t on , t r , t d (on) ( s) gate resistance r g ( ) switching time t off , t f , t d (off) ? r g switching time t off , t f , t d (off) ( s) gate resistance r g ( ) switching loss e on , e off ? r g switching loss e on , e off (mj) gate resistance r g ( ) switching time t on , t r , t d (on) ? r g switching time t on , t r , t d (on) ( s) collector current i c (a) switching loss e on , e off ? i c switching loss e on , e off (mj) collector current i c (a) switching time t off , t f , t d (off) ? i c switching time t off , t f , t d (off) ( s) t d ( on ) t r 0 10 20 30 40 50 0.01 0.03 0.3 1 3 10 0.1 common emitter v cc 300 v v gg 15 v r g 13 : tc 25c : tc 125c (note 1) t on 0 10 20 30 40 50 0.01 0.03 0.3 1 3 10 0.1 common emitter v cc 300 v v gg 15 v r g 13 : tc 25c : tc 125c (note 1) t d ( off ) t of f t f 1 3 10 30 100 1000 0.1 0.3 1 3 10 30 300 common emitter v cc 300 v v gg 15 v i c 50 a : tc 25c : tc 125c (note 2) e of f e on 1 3 10 30 100 1000 0.01 0.03 0.3 1 3 10 0.1 300 t d (on) t on t r common emitter v cc 300 v v gg 15 v i c 50 a : tc 25c : tc 125c (note 1) 1 0 10 20 30 40 50 0.1 3 10 common emitter v cc 300 v v gg 15 v r g 13 : tc 25c : tc 125c (note 2) 0.3 e of f e on 1 3 10 30 100 1000 0.01 0.03 0.3 1 3 10 0.1 300 t of f t d ( off ) t f common emitter v cc 300 v v gg 15 v i c 50 a : tc 25c : tc 125c (note 1)
GT50J121 2002-03-18 5 collector-emitter voltage v ce (v) c ? v ce capacitance c (pf) gate-emitter voltage v ge (v) gate charge q g (nc) v ce , v ge ? q g collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) safe operating area collector current i c (a) collector-emitter voltage v ce (v) reverse bias soa collector current i c (a) 0 100 200 300 400 common emitter r l 6 tc 25c 300 v ce 100 v 200 0 100 200 300 400 500 0 4 8 16 20 12 0.1 1 3 30 300 1000 10 30 300 1000 3000 30000 100 10 0.3 100 10000 common emitter v ge 0 f 1 mhz tc 25c c ies c oes c res pulse width t w (s) r th (t) ? t w transient thermal resistance r th (t) (c/w) 10 5 10 4 10 2 10 1 10 2 10 4 10 3 10 2 10 1 10 1 10 2 tc 25c 10 0 10 3 10 0 10 1 t j 125c v ge 15 v r g 13 1 3 10 30 100 1000 0.1 0.3 3 10 100 300 30 1 300 1 3 10 30 300 1000 0.1 0.3 3 10 100 300 * : single pulse tc 25c curves must be derated linearly with increase in temperature. 100 30 1 100 s * 50 s * 1 ms * 10 ms * dc operation i c max (continuous) i c max (pulse) *
GT50J121 2002-03-18 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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